Redin, Eduardo Gabriel

PRODUCCION CIENTÍFICO TECNOLÓGICA

Mostrando ítems 1-17 de 17

Artículo 6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process

García Inza, Mariano Andrés ; Cassani, María Victoria ; Carbonetto, Sebastián Horacio ; Casal, M.; Redin, Eduardo Gabriel; Faigon, Adrián Néstor (Pergamon-Elsevier Science Ltd, 2018-10)
Artículo CMOS differential and amplified dosimeter with field oxide N-channel MOSFETs

García Inza, Mariano Andrés ; Carbonetto, Sebastián Horacio ; Lipovetzky, José ; Carra, Martin Javier; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; Faigon, Adrián Néstor (Institute of Electrical and Electronics Engineers, 2014-12)
Artículo Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

Quinteros, C. P.; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Rafí, J. M.; Zabala, M.; Faigón, A.; Palumbo, Félix Roberto Mario ; Campabadal, F. (Institute of Electrical and Electronics Engineers, 2012-03)
Artículo Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

Sambuco Salomone, Lucas Ignacio; Lipovetzky, José ; Carbonetto, Sebastián Horacio ; García Inza, Mariano Andrés ; Redin, Eduardo Gabriel; Campabadal, F.; Faigon, Adrián Néstor (Elsevier Science Sa, 2016-02)
Artículo Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters

Cassani, María Victoria ; Sambuco Salomone, Lucas Ignacio; Carbonetto, Sebastián Horacio ; Faigon, Adrián Néstor ; Redin, Eduardo Gabriel; García Inza, Mariano Andrés (Pergamon-Elsevier Science Ltd, 2021-05)
Artículo Experimental evidence and modeling of non-monotonic responses in MOS dosimeters

Faigon, Adrián Néstor ; García Inza, Mariano Andrés ; Lipovetzky, José ; Redin, Eduardo Gabriel; Carbonetto, Sebastián Horacio ; Sambuco Salomone, Lucas Ignacio; Berbeglia, F. (Elsevier, 2013-05)
Artículo Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

Lipovetzky, José ; García Inza, Mariano Andrés ; Carbonetto, Sebastián Horacio ; Carra, Martin Javier; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; Faigon, Adrián Néstor (Institute of Electrical and Electronics Engineers, 2013-12)
Artículo Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement

García Inza, Mariano Andrés ; Lipovetzky, José ; Redin, Eduardo Gabriel; Carbonetto, Sebastián Horacio ; Faigon, Adrián Néstor (Institute of Electrical and Electronics Engineers, 2011-06)
Artículo Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current

García Cozzi, R.; Redin, Eduardo Gabriel; García Inza, Mariano Andrés ; Sambuco Salomone, Lucas Ignacio; Faigon, Adrián Néstor ; Carbonetto, Sebastián Horacio (Pergamon-Elsevier Science Ltd, 2022-10)
Artículo Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry

Sambuco Salomone, Lucas Ignacio; García Inza, Mariano Andrés ; Carbonetto, Sebastián Horacio ; Lipovetzky, José ; Redin, Eduardo Gabriel; Faigon, Adrián Néstor (Institute of Electrical and Electronics Engineers, 2022-06)
Artículo Neutron‐Gamma Dosimetry for BNCT using Field Oxide Transistors with Gadolinium Oxide as Neutron Converter Layer

Gimenez, Melisa Lucía; Lipovetzky, José ; Alcalde Bessia, Fabricio Pablo ; Longhino, Juan Manuel; Tartaglione, Aureliano ; García Inza, Mariano Andrés ; Blostein, Juan Jeronimo ; Carbonetto, Sebastián Horacio ; Gomez Berisso, Mariano ; Pérez, Martín ; Sidelnik, Iván Pedro ; Redin, Eduardo Gabriel; Faigon, Adrián Néstor (American Association of Physicists in Medicine, 2022-02)
Artículo New fowler-nordheim injection, charge neutralization, and gamma tests on the REM RFT300 RADFET dosimeter

Lipovetzky, José ; Holmes Siedle, A.; García Inza, Mariano Andrés ; Carbonetto, Sebastián Horacio ; Redin, Eduardo Gabriel; Faigon, A. (Institute of Electrical and Electronics Engineers, 2012-12)
Artículo Numerical modeling of radiation-induced charge neutralization in MOS devices

Sambuco Salomone, Lucas Ignacio; García Inza, Mariano Andrés ; Carbonetto, Sebastián Horacio ; Lipovetzky, José ; Redin, Eduardo Gabriel; Faigon, Adrián Néstor (Pergamon-Elsevier Science Ltd, 2022-04)
Artículo Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Sambuco Salomone, Lucas Ignacio; Kasulin, A.; Lipovetzky, José ; Carbonetto, Sebastián Horacio ; García Inza, Mariano Andrés ; Redin, Eduardo Gabriel; Berbeglia, F.; Campabadal, F.; Faigon, Adrián Néstor (American Institute of Physics, 2014-11)
Artículo Reducing measurement uncertainties using bias cycled measurement in MOS dosimetry at different temperatures

Lipovetzky, José ; Redin, Eduardo Gabriel; García Inza, Mariano Andrés ; Carbonetto, Sebastián Horacio ; Faigon, Adrián Néstor (Institute of Electrical and Electronics Engineers, 2010-04)
Artículo Switched Bias Differential MOSFET Dosimeter

García Inza, Mariano Andrés ; Carbonetto, Sebastián Horacio ; Lipovetzky, José ; Carra, Martin Javier; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Faigon, Adrián Néstor (Institute of Electrical and Electronics Engineers, 2014-06)
Artículo Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry

Carbonetto, Sebastián Horacio ; García Inza, Mariano Andrés ; Lipovetzky, José ; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; Faigon, Adrian Nestor (Institute of Electrical and Electronics Engineers, 2011-09)

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