Numerical modeling of radiation-induced charge neutralization in MOS devices

Radiation-induced charge neutralization at different bias is studied for 230 nm p-channel MOS dosimeters under γ-radiation. A physics-based numerical model is employed to reproduce the experimental results. Good agreement is obtained between measurements and simulations considering capture and neutralization rates independent of electric field during neutralization stages. Sensitivity curves during neutralization stages show a two part process consisting of a slow decrease for short times followed by a rapid fall. Remarkably, the model predicts this behavior and allows to understand that in terms of the potential well generated due to trapped holes within the oxide.

Palabras clave: MOS DOSIMETRY , MOSFETS , NUMERICAL MODELING

Ver el registro completo

Archivos asociados

Tamaño: 2.637Mb

Formato: PDF

Solicitar

Licencia

Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)

Identificadores

URI: http://hdl.handle.net/11336/212492

URL: https://www.sciencedirect.com/science/article/pii/S1350448722000415

DOI: https://doi.org/10.1016/j.radmeas.2022.106745

Colecciones

Articulos (UE-INN - NODO BARILOCHE)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE

Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"

Citación

Sambuco Salomone, Lucas Ignacio; García Inza, Mariano Andrés; Carbonetto, Sebastián Horacio; Lipovetzky, José; Redin, Eduardo Gabriel; et al.; Numerical modeling of radiation-induced charge neutralization in MOS devices; Pergamon-Elsevier Science Ltd; Radiation Measurements; 153; 4-2022; 1-5

Altmétricas