Artículo

Switched Bias Differential MOSFET Dosimeter

García Inza, Mariano AndrésIcon ; Carbonetto, Sebastián HoracioIcon ; Lipovetzky, JoséIcon ; Carra, Martin Javier; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Faigon, Adrián NéstorIcon
Fecha de publicación: 06/2014
Editorial: Institute of Electrical and Electronics Engineers
Revista: Ieee Transactions on Nuclear Science
ISSN: 0018-9499
e-ISSN: 1558-1578
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

This paper presents a differential MOSFET sensor reading technique based on the bias controlled cycled measurement. The circuit was implemented, and tested with gamma radiation from a 60-cobalt source. Temperature rejection performance was assessed during the exposure in real-time measurements. The results show that in comparison with a single MOSFET dosimeter the thermal drift is 20 times smaller and the radiation sensitivity is approximately 10% higher. The switched biasing allows to extend the measurement range beyond MOSFET's threshold voltage saturation.
Palabras clave: Mosfet , Dosimeter , Radiation , Sensor
 
Archivos asociados
Thumbnail
 
Tamaño: 1.190Mb
Formato: PDF
.
Licencia
info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/32876
URL: http://ieeexplore.ieee.org/document/6819076/
DOI: http://dx.doi.org/10.1109/TNS.2014.2316337
Colecciones
Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Citación
Lipovetzky, José; Faigon, Adrián Néstor; Redin, Eduardo Gabriel; Carbonetto, Sebastián Horacio; Sambuco Salomone, Lucas Ignacio; Carra, Martin Javier; et al.; Switched Bias Differential MOSFET Dosimeter; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 61; 3; 6-2014; 1407-1413
Compartir
Altmétricas