Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation

The response of commercial-off-the-shelf CD4007 p-channel MOSFET exposed to 60Co radiation under switched-bias conditions is studied by real time monitoring the threshold voltage evolution with accumulated dose. The possibility to employ switched-bias techniques to recover threshold voltage is demonstrated. As reported for other devices, non-monotonic responses are observed. A physics-based numerical model that takes into account both charge buildup within the oxide and generation of interface traps is employed to reproduce the experimental results. The implications for dosimetry are discussed.

Palabras clave: MOSFETS , RADIATION EFFECTS , SOLID-STATE DETECTORS

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Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)

Identificadores

URI: http://hdl.handle.net/11336/261642

URL: https://linkinghub.elsevier.com/retrieve/pii/S0026271424001483

DOI: http://dx.doi.org/10.1016/j.microrel.2024.115468

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Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"

Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL

Citación

Sambuco Salomone, Lucas Ignacio; García Inza, Mariano Andrés; Lipovetzky, José; Cassani, María Victoria; Redin, Eduardo Gabriel; et al.; Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation; Pergamon-Elsevier Science Ltd; Microelectronics Reliability; 160; 9-2024; 1-7

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