6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process

This paper presents the characterization of a thick gate oxide MOSFET for radiotherapy in-vivo dosimetry. The device is an N-channel transistor fabricated in a standard CMOS process using the Field Oxide as gate insulator. Sensitivity, fading, gate bias voltage dependence, percentage depth dose and angular response were assessed using a 6 MV LINAC. Experimental results showed that it is possible to estimate dose with a 3% uncertainty in a range up to 85 Gy with an average sensitivity of 62 mV/Gy. The measurement system noise equivalent dose is 3 mGy.

Palabras clave: CMOS , IN-VIVO DOSIMETRY , MOSFET , RADIOTHERAPY

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Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)

Identificadores

URI: http://hdl.handle.net/11336/89596

URL: https://reader.elsevier.com/reader/sd/pii/S1350448718301586?token=299CBAB15E2C68

DOI: https://doi.org/10.1016/j.radmeas.2018.07.009

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Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"

Citación

García Inza, Mariano Andrés; Cassani, María Victoria; Carbonetto, Sebastián Horacio; Casal, M.; Redin, Eduardo Gabriel; et al.; 6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process; Pergamon-Elsevier Science Ltd; Radiation Measurements; 117; 10-2018; 63-69

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