Artículo
Experimental evidence and modeling of non-monotonic responses in MOS dosimeters
Faigon, Adrián Néstor
; García Inza, Mariano Andrés
; Lipovetzky, José
; Redin, Eduardo Gabriel; Carbonetto, Sebastián Horacio
; Sambuco Salomone, Lucas Ignacio; Berbeglia, F.
Fecha de publicación:
05/2013
Editorial:
Elsevier
Revista:
Radiation Physics and Chemistry (Oxford)
ISSN:
0969-806X
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
The evolution of the threshold voltage of MOS dosimeters during irradiation under switched bias is investigated with the aim of using the sensors with a new biasing technique. The devices response to a bias change does not only depend on the instant threshold voltage and bias, and may lead to non-monotonical behavior under fixed bias following the switch. This work shows experimental evidence for this effect and presents a simple model based on oxide charge buildup and neutralization. The proposed model reproduces the experimental data assuming the existence of two types of hole traps in the oxide. Physical interpretations of the results are discussed.
Palabras clave:
Mos Devices
,
Dosimetry
,
Gamma Rays
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Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Articulos de SEDE CENTRAL
Citación
Faigon, Adrián Néstor; García Inza, Mariano Andrés; Lipovetzky, José; Redin, Eduardo Gabriel; Carbonetto, Sebastián Horacio; et al.; Experimental evidence and modeling of non-monotonic responses in MOS dosimeters; Elsevier; Radiation Physics and Chemistry (Oxford); 95; 5-2013; 44-46
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