FELIX ROBERTO MARIO PALUMBO

Datos académicos

Lugar de trabajo	COMISION NACIONAL DE ENERGIA ATOMICA / GERENCIA D/AREA DE ENERGIA NUCLEAR / UNIDAD DE ACTIVIDAD DE MATERIALES (CAC)
Título	Doctor
Grado	Universitario de posgrado/doctorado
Campo de aplicación	Espacio-Varios
Especialidad	FISICA DE DISPOSITIVOS - MICROELECTRONICA - NANOTECNOLOGIA

PRODUCCION CIENTÍFICO TECNOLÓGICA

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Evento A Geometric modeling approach for flexible, printed square planariInductors under stretch

Maroli, Gabriel; Fontana, Andrés; Pazos, Sebastian; Palumbo, Felix Roberto Mario ; Julian, Pedro Marcelo (Institute of Electrical and Electronics Engineers, 2021)
Artículo A review on dielectric breakdown in thin dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics

Palumbo, Félix Roberto Mario ; Wen, Chao; Lombardo, Salvatore; Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Eizenberg, Moshe; Hui, Fei; Lanza, Mario (Wiley VCH Verlag, 2019-04-30)
Artículo Analytic circuit model for thermal drying behavior of electronic inks

Maroli, Gabriel ; Boyeras, Santiago; Giannetta, Hernan ; Pazos, Sebastian; Gak, Joel; Oliva, Alejandro Raul ; Volpe, María Alicia ; Julian, Pedro Marcelo ; Palumbo, Felix Roberto Mario (Frontiers Media, 2023-01)
Artículo Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect

Miranda, E.; Palumbo, Félix Roberto Mario (Pergamon-Elsevier Science Ltd, 2011-07)
Artículo Application of the quasi-static memdiode model in cross-point arrays for large dataset pattern recognition

Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Palumbo, Felix Roberto Mario ; Suñé, Jordi; Miranda, Enrique (Institute of Electrical and Electronics Engineers, 2019-11)
Artículo Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults

Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Palumbo, Félix Roberto Mario ; Morell, Antoni; Suñé, Jordi; Miranda, Enrique (MDPI, 2021-10-06)
Artículo Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces

Miron, Dror; Cohen Azarzar, Dana; Segev, Noa; Baskin, Maria; Palumbo, Félix Roberto Mario ; Yalon, Eilam; Kornblum, Lior (American Institute of Physics, 2020-07)
Artículo Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric

Palumbo, Félix Roberto Mario ; Liang, Xianhu; Yuan, Bin; Shi, Yuanyuan; Hui, Fei; Villena, Marco A.; Lanza, Mario (Blackwell Publishing, 2018-03)
Artículo Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance

Boyeras Baldomá, Santiago ; Pazos, Sebastián Matías ; Aguirre, F. L.; Palumbo, Felix Roberto Mario (American Institute of Physics, 2020-07)
Artículo Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks

Palumbo, Félix Roberto Mario ; Winter, R.; Krylov, I.; Eizenberg, M. (American Institute of Physics, 2014-06)
Artículo Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

Palumbo, Félix Roberto Mario ; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M. (American Institute of Physics, 2015-09)
Artículo Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

Quinteros, C. P.; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Rafí, J. M.; Zabala, M.; Faigón, A.; Palumbo, Félix Roberto Mario ; Campabadal, F. (Institute of Electrical and Electronics Engineers, 2012-03)
Artículo Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

Pazos, Sebastián Matías ; Aguirre, Fernando Leonel ; Miranda, Enrique; Lombardo, Salvatore; Palumbo, Félix Roberto Mario (American Institute of Physics, 2017-03)
Artículo Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks

Palumbo, Félix Roberto Mario ; Krylov, I.; Eizenberg, M. (American Institute of Physics, 2015-03)
Artículo Continuous high-altitude measurements of cosmic ray neutrons and SEU/MCU at various locations: correlation and analyses based-on MUSCA SEP³

Hubert, G.; Velazco, R.; Federico, C.; Cheminet, A.; Silva Cardenas, C.; Caldas, L. V. E.; Pancher, F.; Lacoste, V.; Palumbo, Félix Roberto Mario ; Mansour, W.; Artola, L.; Pineda, F.; Duzellier, S. (Institute of Electrical and Electronics Engineers, 2013-08)
Artículo Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

Aguirre, Fernando Leonel ; Ranjan, Alok; Raghavan, Nagarajan; Padovani, Andrea; Pazos, Sebastián Matías ; Vega, Nahuel Agustín ; Müller, Nahuel Agustín; Debray, Mario Ernesto; Molina Reyes, Joel; Pey, Kin-Leong; Palumbo, Félix Roberto Mario (Japan Society Applied Physics, 2021-10)
Artículo Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

Palumbo, Félix Roberto Mario ; Inbar, Moshe (American Institute of Physics, 2014-01)
Artículo Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Jiang, Lanlan; Shi, Yuanyuan; Hui, Fei; Tang, Kechao; Wu, Qian; Pan, Chengbin; Jing, Xu; Uppal, Hasan; Palumbo, Félix Roberto Mario ; Lu, Guangyuan; Wu, Tianru; Wang, Haomin; Villena, Marco A.; Xie, Xiaoming; McIntyre, Paul C.; Lanza, Mario (American Chemical Society, 2017-11)
Artículo Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

Aguirre, Fernando Leonel ; Pazos, Sebastián Matías ; Palumbo, Félix Roberto Mario ; Fadida, S.; Winter, R.; Eizenberg, M. (American Institute of Physics, 2018-04)
Artículo Electrical correlation of double-diffused metaloxidesemiconductor transistors exposed to gamma photons, protons, and hot carriers

Palumbo, Félix Roberto Mario ; Faigon, Adrián Néstor ; Curro, Giuseppe (Institute of Electrical and Electronics Engineers, 2011-05)

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