Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry

In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.

Palabras clave: DOSIMETRY , IONIZING RADIATION SENSORS , MOS DEVICES , RADIATION EFFECTS , TEMPERATURE

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Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)

Identificadores

URI: http://hdl.handle.net/11336/193204

DOI: http://dx.doi.org/10.1109/TNS.2011.2170430

URL: https://ieeexplore.ieee.org/document/6065778

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Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL

Citación

Carbonetto, Sebastián Horacio; García Inza, Mariano Andrés; Lipovetzky, José; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; et al.; Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 58; 6 PART 2; 9-2011; 3348-3353

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