Artículo
Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors
Sambuco Salomone, Lucas Ignacio; Lipovetzky, José
; Carbonetto, Sebastián Horacio
; García Inza, Mariano Andrés
; Redin, Eduardo Gabriel; Campabadal, F.; Faigon, Adrián Néstor
Fecha de publicación:
02/2016
Editorial:
Elsevier Science Sa
Revista:
Thin Solid Films
ISSN:
0040-6090
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Hafnium oxide (HfO2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO2 interface at an energy level Et = 1.59 eV below the HfO2 conduction band edge with density Nt = 1.36 × 1019 cm- 3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work.
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Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Citación
Sambuco Salomone, Lucas Ignacio; Lipovetzky, José; Carbonetto, Sebastián Horacio; García Inza, Mariano Andrés; Redin, Eduardo Gabriel; et al.; Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors; Elsevier Science Sa; Thin Solid Films; 600; 2-2016; 36-42
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