Artículo

Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

Quinteros, C. P.; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Rafí, J. M.; Zabala, M.; Faigón, A.; Palumbo, Félix Roberto MarioIcon ; Campabadal, F.
Fecha de publicación: 03/2012
Editorial: Institute of Electrical and Electronics Engineers
Revista: Ieee Transactions on Nuclear Science
ISSN: 0018-9499
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. The main trend of the results shows that the nanolaminates stack presents the highest levels of hysteresis and stretch-out of the C-V curves, suggesting that interface layers between dielectrics could play a relevant role in the study of the radiation response.
Palabras clave: HIGH-K GATE DIELECTRICS , MOS DEVICES , RADIATION EFFECTS
 
Archivos asociados
Thumbnail
 
Tamaño: 1.017Mb
Formato: PDF
.
Licencia
info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/199518
URL: https://ieeexplore.ieee.org/document/6170909
DOI: http://dx.doi.org/10.1109/TNS.2012.2187217
Colecciones
Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Citación
Quinteros, C. P.; Sambuco Salomone, Lucas Ignacio; Redin, Eduardo Gabriel; Rafí, J. M.; Zabala, M.; et al.; Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 59; 4 PART 1; 3-2012; 767-772
Compartir
Altmétricas