Artículo
Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement
García Inza, Mariano Andrés
; Lipovetzky, José
; Redin, Eduardo Gabriel; Carbonetto, Sebastián Horacio
; Faigon, Adrián Néstor
Fecha de publicación:
06/2011
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
Ieee Transactions on Nuclear Science
ISSN:
0018-9499
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Floating Gate Metal Oxide Semiconductor (FG-MOS) structures, designed and fabricated in a CMOS process, were irradiated under the Bias Controlled Cycled Measurement (BCCM) novel technique conditions. Results presented in this work show the possibility of using such structures with the BCCM technique to measure ionizing radiation absorbed dose over a range of several kGy without significant loss of sensitivity. Transients observed after the bias switch are related to the evolution of the charge distribution between the floating gate and oxide traps near the semiconductor.
Palabras clave:
DOSIMETRY
,
MOS DEVICES
,
RADIATION EFFECTS
,
RADIATION MONITORING
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Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Articulos de SEDE CENTRAL
Citación
García Inza, Mariano Andrés; Lipovetzky, José; Redin, Eduardo Gabriel; Carbonetto, Sebastián Horacio; Faigon, Adrián Néstor; Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 58; 3 PART 2; 6-2011; 808-812
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