Artículo
CMOS differential and amplified dosimeter with field oxide N-channel MOSFETs
García Inza, Mariano Andrés
; Carbonetto, Sebastián Horacio
; Lipovetzky, José
; Carra, Martin Javier; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; Faigon, Adrián Néstor
Fecha de publicación:
12/2014
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
Ieee Transactions on Nuclear Science
ISSN:
0018-9499
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We propose the use of a CMOS differential circuit with inherent amplification to enhance the performance of n-channel field oxide MOSFETs as ionizing radiation dosimeters. These new dosimeters are aimed to be used in low dose applications such as X-ray diagnosis. The circuit is presented and described, and a discrete-level prototype was tested as regards sensitivity, temperature variations compensation and signal-to-noise ratio at different operation conditions. Results show that, comparing to a single MOSFET dosimeter, on chip amplification is possible along with temperature induced error attenuation. The highest sensitivity measured with respect to γ radiation was 0.4 V/rad. The circuit successfully measured the dose delivered in an X-ray image diagnosis environment with a sensitivity of approximately 0.5 V/rad.
Palabras clave:
Dosimeters
,
Mos Devices
,
Radiation Effects
,
Solid-State Detectors
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
García Inza, Mariano Andrés; Carbonetto, Sebastián Horacio; Lipovetzky, José; Carra, Martin Javier; Redin, Eduardo Gabriel; et al.; CMOS differential and amplified dosimeter with field oxide N-channel MOSFETs; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 61; 6; 12-2014; 3466-3471
Compartir
Altmétricas