Artículo
Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current
García Cozzi, R.; Redin, Eduardo Gabriel; García Inza, Mariano Andrés
; Sambuco Salomone, Lucas Ignacio; Faigon, Adrián Néstor
; Carbonetto, Sebastián Horacio
Fecha de publicación:
10/2022
Editorial:
Pergamon-Elsevier Science Ltd
Revista:
Microelectronics Reliability
ISSN:
0026-2714
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Interface degradation-induced shifts of MOSFET thermal coefficients and zero temperature coefficient current (IZTC) were studied by monitoring the interface traps (Nit) growth in a thick oxide n-channel MOSFET due to exposure to ionizing radiation, and to further annealing at room temperature. A new physics-based compact model was proposed to account for the observed results, and to predict the evolution of these parameters as interface traps are generated during stress. Within a range (0–40∘C) around room temperature, both the inverse of the mobility and the threshold voltage thermal coefficient varied roughly linear with Nit, with relative variations of 5.2×10−13eVcm2 and −9.33×10−13eVcm2, respectively. Furthermore, the dependence for IZTC with Nit can also be approximated to a linear expression, with a relative increment of 1.94×10−12eVcm2. The implications for temperature error mitigation in MOS sensors were discussed.
Palabras clave:
INTERFACE TRAPS
,
MOS SENSORS
,
MOS THERMAL COEFFICIENTS
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Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Citación
García Cozzi, R.; Redin, Eduardo Gabriel; García Inza, Mariano Andrés; Sambuco Salomone, Lucas Ignacio; Faigon, Adrián Néstor; et al.; Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current; Pergamon-Elsevier Science Ltd; Microelectronics Reliability; 137; 10-2022; 1-8
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