Artículo
Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes
Lipovetzky, José
; García Inza, Mariano Andrés
; Carbonetto, Sebastián Horacio
; Carra, Martin Javier; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; Faigon, Adrián Néstor
Fecha de publicación:
12/2013
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
Ieee Transactions on Nuclear Science
ISSN:
0018-9499
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
This paper presents a new technique to build MOS dosimeters using unmodified standard CMOS processes. The devices are n-channel MOS transistors built with the regular Field Oxide as a thick radiation-sensitive gate. The devices were fabricated in two different commercial m CMOS processes, gate oxide thicknesses of nm and nm. Responsivities up to 4.4 mV/rad with positive bias, and 1.7 mV/rad with zero gate bias were obtained in the thicker oxides. The effect of charge trapped in the oxide and interface states on the shift in the threshold voltage are analyzed.
Palabras clave:
Dosimeters
,
Mos Devices
,
Radiation Effects
,
Solid-State Detectors
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Identificadores
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Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Articulos de SEDE CENTRAL
Citación
Lipovetzky, José; García Inza, Mariano Andrés; Carbonetto, Sebastián Horacio; Carra, Martin Javier; Redin, Eduardo Gabriel; et al.; Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 60; 6; 12-2013; 4683-4691
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