Artículo
Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters
Cassani, María Victoria
; Sambuco Salomone, Lucas Ignacio; Carbonetto, Sebastián Horacio
; Faigon, Adrián Néstor
; Redin, Eduardo Gabriel; García Inza, Mariano Andrés
Fecha de publicación:
05/2021
Editorial:
Pergamon-Elsevier Science Ltd
Revista:
Radiation Physics and Chemistry (Oxford)
ISSN:
0969-806X
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
The response of MOS dosimeters fabricated using field oxide as gate insulator was characterized measuring the threshold voltage shift with absorbed dose. Sensitivity for different applied bias and threshold voltage evolution with dose for constant bias were experimentally obtained. A physics-based numerical model was developed to reproduce these measurements. The model includes the main physical processes leading to hole trapping and neutralization with the capture rate per free hole as the only fitting parameter. The model predicted further experiments of the zero bias sensitivity for an extended dose range. For low threshold voltage values, charge neutralization was observed. Simulations were insensitive to the value of the neutralization-related physical parameter, even during threshold voltage recovery. We showed that this result is related with the presence of a potential well for electrons within the oxide which drives the neutralization process. This dosimeter was compared to other thick oxide ones and different dosimetry considerations were discussed.
Palabras clave:
MICROELECTRONICS
,
MOS
,
RADIATION
,
NUMERICAL MODELING
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Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Citación
Cassani, María Victoria; Sambuco Salomone, Lucas Ignacio; Carbonetto, Sebastián Horacio; Faigon, Adrián Néstor; Redin, Eduardo Gabriel; et al.; Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters; Pergamon-Elsevier Science Ltd; Radiation Physics and Chemistry (Oxford); 182; 5-2021; 1-7
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