Artículo
A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
Pagano, Roberto; Lombardo, Salvatore; Palumbo, Félix Roberto Mario
; Carloni, Stefania; Kirsch, Paul; Krishnan, Siddarth; Young, Chadwin; Choi, Rino; Bersuker, Gennadi; Stathis, James
; Carloni, Stefania; Kirsch, Paul; Krishnan, Siddarth; Young, Chadwin; Choi, Rino; Bersuker, Gennadi; Stathis, James
Fecha de publicación:
12/2008
Editorial:
IOP Publishing
Revista:
ECS Transactions
ISSN:
1938-5862
e-ISSN:
1938-6737
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.
Palabras clave:
HIGH K DIELECTRICS
,
RELIABILITY
,
METAL GATES
,
OXIDE BREAKDOWN
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456.0Kb
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Licencia
Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción:
Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
Colecciones
Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Articulos de SEDE CENTRAL
Citación
Pagano, Roberto; Lombardo, Salvatore; Palumbo, Félix Roberto Mario; Carloni, Stefania; Kirsch, Paul; et al.; A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks; IOP Publishing; ECS Transactions; 14; 1; 12-2008; 303-309
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