Boyeras Baldomá, Santiago

Datos académicos

PRODUCCION CIENTÍFICO TECNOLÓGICA

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Artículo Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance

Boyeras Baldomá, Santiago ; Pazos, Sebastián Matías ; Aguirre, F. L.; Palumbo, Felix Roberto Mario (American Institute of Physics, 2020-07)
Artículo Impact of bilayered oxide stacks on the breakdown transients of Metal-Oxide-Semiconductor devices: an experimental study

Pazos, Sebastián Matías ; Boyeras Baldomá, Santiago ; Aguirre, Fernando Leonel ; Krylov, Igor; Eizenberg, M.; Palumbo, Felix Roberto Mario (American Institute of Physics, 2020-05)
Artículo Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

Lanza, Mario; Palumbo, Felix Roberto Mario ; Shi, Yuanyuan; Aguirre, Fernando Leonel ; Boyeras Baldomá, Santiago ; Yuan, Bin; Yalon, Eilam; Moreno, Enrique; Wu, Tianru; Roldan, Juan B. (John Wiley and Sons Inc, 2021-08-12)
Artículo Wear-out and breakdown of Ta2O5/Nb:SrTiO3 stacks

Boyeras Baldomá, Santiago ; Pazos, Sebastián Matías ; Aguirre, F. L.; Ankonina, G.; Kornblum, L.; Yalon, E.; Palumbo, Felix Roberto Mario (Pergamon-Elsevier Science Ltd, 2022-12)

Mostrando ítems 1-4 de 4