Artículo

Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

Palumbo, Félix Roberto MarioIcon ; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M.
Fecha de publicación: 09/2015
Editorial: American Institute of Physics
Revista: Applied Physics Letters
ISSN: 0003-6951
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.
Palabras clave: Iii-V Mos Stacks , Xps , Breakdown Effects
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/42173
DOI: http://dx.doi.org/10.1063/1.4931496
URL: https://aip.scitation.org/doi/10.1063/1.4931496
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Citación
Palumbo, Félix Roberto Mario; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M.; Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 107; 12; 9-2015; 1-4; 122901
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