Artículo

Two resistive switching regimes in thin film manganite memory devices on silicon

Rubi, DiegoIcon ; Tesler, Federico ArielIcon ; Alposta, I.; Kalstein, ArielIcon ; Ghenzi, NéstorIcon ; Gomez Marlasca, F.; Rozenberg, Marcelo JavierIcon ; Levy, Pablo EduardoIcon
Fecha de publicación: 10/2013
Editorial: American Institute of Physics
Revista: Applied Physics Letters
ISSN: 0003-6951
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

Bipolar resistive switching in low cost n-Si/La2/3Ca1/3MnO3/M (M¼TiþCu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness.
Palabras clave: Memory Device , Memristor , Nanotechnology , Reram
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution 2.5 Unported (CC BY 2.5)
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URI: http://hdl.handle.net/11336/25422
DOI: http://dx.doi.org/10.1063/1.4826484
URL: http://aip.scitation.org/doi/10.1063/1.4826484
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Citación
Rubi, Diego; Tesler, Federico Ariel; Alposta, I.; Kalstein, Ariel; Ghenzi, Néstor; et al.; Two resistive switching regimes in thin film manganite memory devices on silicon; American Institute of Physics; Applied Physics Letters; 103; 16; 10-2013; 1-6; 163506
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