Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6

Abstract

The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.