Numerical analysis of si and gaas solar cells exposed to space radiation
; Casas, Guillermo ; Cedola, Ariel Pablo ; Peltzer y Blanca, Eitel Leopoldo Otros responsables
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02/2013
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Institute of Electrical and Electronics Engineers
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IEEE Latin America Transactions
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1548-0992
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Español
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In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
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Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-273
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