Resistive switching effect on Al2O3/InGaAs stacks

Volver a la Vista simple
dc.conicet.organizacionConsejo Nacional de Investigaciones Científicas y Técnicas
dc.conicet.organizacionTechnion - Israel Institute of Technology
dc.conicet.organizacionTechnion - Israel Institute of Technology
dc.conicet.organizacionTechnion - Israel Institute of Technology
dc.conicet.organizacionTechnion - Israel Institute of Technology
dc.conicet.organizacionTechnion - Israel Institute of Technology
dc.conicet.paisOrganizacionArgentina
dc.conicet.paisOrganizacionIsrael
dc.conicet.paisOrganizacionIsrael
dc.conicet.paisOrganizacionIsrael
dc.conicet.paisOrganizacionIsrael
dc.conicet.paisOrganizacionIsrael
dc.conicet.produccionid5201418
dc.contributor.authorPalumbo, Félix Roberto Mario
dc.contributor.authorShekhter, P.
dc.contributor.authorKrylov, I.
dc.contributor.authorRitter, D.
dc.contributor.authorEizenberg, M.
dc.date.accessioned2017-07-19T19:36:07Z
dc.date.available2017-07-19T19:36:07Z
dc.date.issued2013-09
dc.date.updated2017-07-18T20:05:59Z
dc.description.abstractThe resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channelses
dc.description.filFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Technion - Israel Institute of Technology; Israel
dc.description.filFil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
dc.description.filFil: Krylov, I.. Technion - Israel Institute of Technology; Israel
dc.description.filFil: Ritter, D.. Technion - Israel Institute of Technology; Israel
dc.description.filFil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
dc.formatapplication/pdfes
dc.identifier.citationPalumbo, Félix Roberto Mario; Shekhter, P.; Krylov, I.; Ritter, D.; Eizenberg, M.; Resistive switching effect on Al2O3/InGaAs stacks; Elsevier Science; Microelectronic Engineering; 109; 9-2013; 83-86es
dc.identifier.institucionalCONICET
dc.identifier.issn0167-9317es
dc.identifier.repoCONICET Digital
dc.identifier.urihttp://hdl.handle.net/11336/20949
dc.journal.ciudadÁmsterdames
dc.journal.pagination83-86es
dc.journal.paisPaíses Bajoses
dc.journal.titleMicroelectronic Engineeringes
dc.journal.volume109es
dc.language.isoenges
dc.publisherElsevier Sciencees
dc.relation.alternativeidinfo:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0167931713002967
dc.relation.alternativeidinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.mee.2013.03.079
dc.rightsinfo:eu-repo/semantics/openAccess*
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/*
dc.subjectResistive Switchinges
dc.subjectHigh-K Dielectricses
dc.subjectOxide Breakdownes
dc.subject.classificationFísica de los Materiales Condensadoses
dc.subject.classificationCiencias Físicases
dc.subject.classificationCIENCIAS NATURALES Y EXACTASes
dc.titleResistive switching effect on Al2O3/InGaAs stackses
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:ar-repo/semantics/artículo
dc.typeinfo:eu-repo/semantics/publishedVersion

Archivos

Bloque original

Miniatura
Nombre:
CONICET_Digital_Nro.25278.pdf
Tamaño:
475.33 KB
Formato:
Adobe Portable Document Format
Descargar

Colecciones

Articulos(SEDE CENTRAL)
Volver a la Vista simple