A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
; Carloni, Stefania ; Kirsch, Paul ; Krishnan, Siddarth ; Young, Chadwin ; Choi, Rino ; Bersuker, Gennadi ; Stathis, James Otros responsables
Fecha
12/2008
Editorial
IOP Publishing
Revista
ECS Transactions
Título del libro
Nombre del evento
Fecha del evento
Institución organizadora
ISSN
1938-5862
eISSN
1938-6737
ISBN
Idioma
Inglés
Tipo del evento
Clasificación temática
Palabras clave
Resumen
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.
Colecciones
Aprobación
Revisión
Complementado por
Referenciado por
Licencia Creative Commons
Excepto donde se indique lo contrario, la licencia de este ítem se describe como by-nc-sa
Identificadores
Pagano, Roberto; Lombardo, Salvatore; Palumbo, Félix Roberto Mario; Carloni, Stefania; Kirsch, Paul; et al.; A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks; IOP Publishing; ECS Transactions; 14; 1; 12-2008; 303-309
Altmétricas