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dc.contributor.author
Palumbo, Félix Roberto Mario
dc.contributor.author
Shekhter, P.
dc.contributor.author
Cohen Weinfeld, K.
dc.contributor.author
Eizenberg, M.
dc.date.available
2018-04-16T19:01:37Z
dc.date.issued
2015-09
dc.identifier.citation
Palumbo, Félix Roberto Mario; Shekhter, P.; Cohen Weinfeld, K.; Eizenberg, M.; Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks; American Institute of Physics; Applied Physics Letters; 107; 12; 9-2015; 1-4; 122901
dc.identifier.issn
0003-6951
dc.identifier.uri
http://hdl.handle.net/11336/42173
dc.description.abstract
In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Institute of Physics
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Iii-V Mos Stacks
dc.subject
Xps
dc.subject
Breakdown Effects
dc.subject.classification
Nano-materiales
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Nanotecnología
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2018-04-12T14:29:06Z
dc.journal.volume
107
dc.journal.number
12
dc.journal.pagination
1-4; 122901
dc.journal.pais
Estados Unidos
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.fil
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel
dc.description.fil
Fil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; Israel
dc.description.fil
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel
dc.journal.title
Applied Physics Letters
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.4931496
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4931496
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