Artículo
Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
Pagano, R.; Lombardo, S.; Palumbo, Félix Roberto Mario
; Sanfilippo, D.; Valvo, G.; Fallica, G.; Libertino, S.
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Fecha de publicación:
09/2014
Editorial:
Elsevier Science
Revista:
Nuclear Instruments And Methods In Physics Research A: Accelerators, Spectrometers, Detectors And Associated Equipament
ISSN:
0168-9002
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
Palabras clave:
Silicon Photomultiplier
,
Radiation Damage
,
Radiation Hardness
,
Gamma Rays
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Articulos de SEDE CENTRAL
Citación
Pagano, R.; Lombardo, S.; Palumbo, Félix Roberto Mario; Sanfilippo, D.; Valvo, G. ; et al.; Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation; Elsevier Science; Nuclear Instruments And Methods In Physics Research A: Accelerators, Spectrometers, Detectors And Associated Equipament; 767; 9-2014; 347-352
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