Artículo

Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

Palumbo, Félix Roberto MarioIcon ; Shekhter, P.; Eizenberg, M.
Fecha de publicación: 01/2014
Editorial: Elsevier
Revista: Solid-state Electronics
ISSN: 0038-1101
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.
Palabras clave: Ingaas , Resistive Switching , Interface States
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/32762
DOI: http://dx.doi.org/10.1016/j.sse.2013.12.011
URL: https://www.sciencedirect.com/science/article/pii/S0038110113003699
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Citación
Eizenberg, M.; Shekhter, P.; Palumbo, Félix Roberto Mario; Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs; Elsevier; Solid-state Electronics; 93; 1-2014; 56-60
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