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dc.contributor.author
Palumbo, Félix Roberto Mario  
dc.contributor.author
Shekhter, P.  
dc.contributor.author
Eizenberg, M.  
dc.date.available
2018-01-09T21:50:21Z  
dc.date.issued
2014-01  
dc.identifier.citation
Eizenberg, M.; Shekhter, P.; Palumbo, Félix Roberto Mario; Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs; Elsevier; Solid-state Electronics; 93; 1-2014; 56-60  
dc.identifier.issn
0038-1101  
dc.identifier.uri
http://hdl.handle.net/11336/32762  
dc.description.abstract
In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
Elsevier  
dc.rights
info:eu-repo/semantics/openAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
Ingaas  
dc.subject
Resistive Switching  
dc.subject
Interface States  
dc.subject.classification
Astronomía  
dc.subject.classification
Ciencias Físicas  
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS  
dc.title
Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2018-01-08T19:46:36Z  
dc.journal.volume
93  
dc.journal.pagination
56-60  
dc.journal.pais
Países Bajos  
dc.journal.ciudad
Ámsterdam  
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina  
dc.description.fil
Fil: Shekhter, P.. Technion - Israel Institute of Technology; Israel  
dc.description.fil
Fil: Eizenberg, M.. Technion - Israel Institute of Technology; Israel  
dc.journal.title
Solid-state Electronics  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.sse.2013.12.011  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0038110113003699  

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