Artículo

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

Stoliar, Pablo Alberto; Levy, Pablo EduardoIcon ; Sánchez, María JoséIcon ; Leiva, A. G.; Albornoz, C.A.; Gomez Marlasca, F.; Zanini, A.; Toro Salazar, Cinthya Emma; Ghenzi, N.; Rozenberg, M. J.
Fecha de publicación: 13/01/2014
Editorial: Institute of Electrical and Electronics Engineers
Revista: Ieee Transactions On Circuits And Systems Ii-analog And Digital Signal Processing
ISSN: 1057-7130
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs. Index Terms?Multilevel cell, Resistive switching, Non-volatile memory, ReRAM .
Palabras clave: Multilevel Cell , Non-Volatile Memory , Resistive Switching , Reram
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/29485
DOI: http://dx.doi.org/10.1109/TCSII.2013.2290921
URL: http://ieeexplore.ieee.org/document/6689338/?reload=true
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Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Stoliar, Pablo Alberto; Levy, Pablo Eduardo; Sánchez, María José; Leiva, A. G.; Albornoz, C.A.; et al.; Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit; Institute of Electrical and Electronics Engineers; Ieee Transactions On Circuits And Systems Ii-analog And Digital Signal Processing; 61; 1; 13-1-2014; 21-25
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