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dc.contributor.author
Pagano, Roberto  
dc.contributor.author
Lombardo, Salvatore  
dc.contributor.author
Palumbo, Félix Roberto Mario  
dc.contributor.author
Carloni, Stefania  
dc.contributor.author
Kirsch, Paul  
dc.contributor.author
Krishnan, Siddarth  
dc.contributor.author
Young, Chadwin  
dc.contributor.author
Choi, Rino  
dc.contributor.author
Bersuker, Gennadi  
dc.contributor.author
Stathis, James  
dc.date.available
2024-11-26T12:58:37Z  
dc.date.issued
2008-12  
dc.identifier.citation
Pagano, Roberto; Lombardo, Salvatore; Palumbo, Félix Roberto Mario; Carloni, Stefania; Kirsch, Paul; et al.; A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks; IOP Publishing; ECS Transactions; 14; 1; 12-2008; 303-309  
dc.identifier.issn
1938-5862  
dc.identifier.uri
http://hdl.handle.net/11336/248663  
dc.description.abstract
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.2 / interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
IOP Publishing  
dc.rights
info:eu-repo/semantics/openAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
HIGH K DIELECTRICS  
dc.subject
RELIABILITY  
dc.subject
METAL GATES  
dc.subject
OXIDE BREAKDOWN  
dc.subject.classification
Otras Ciencias Físicas  
dc.subject.classification
Ciencias Físicas  
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS  
dc.title
A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2024-11-15T14:51:06Z  
dc.identifier.eissn
1938-6737  
dc.journal.volume
14  
dc.journal.number
1  
dc.journal.pagination
303-309  
dc.journal.pais
Reino Unido  
dc.journal.ciudad
Bristol  
dc.description.fil
Fil: Pagano, Roberto. Consiglio Nazionale delle Ricerche; Italia  
dc.description.fil
Fil: Lombardo, Salvatore. Consiglio Nazionale delle Ricerche; Italia  
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina  
dc.description.fil
Fil: Carloni, Stefania. Consiglio Nazionale delle Ricerche; Italia  
dc.description.fil
Fil: Kirsch, Paul. Sematech; Estados Unidos  
dc.description.fil
Fil: Krishnan, Siddarth. Sematech; Estados Unidos  
dc.description.fil
Fil: Young, Chadwin. Sematech; Estados Unidos  
dc.description.fil
Fil: Choi, Rino. Sematech; Estados Unidos  
dc.description.fil
Fil: Bersuker, Gennadi. Sematech; Estados Unidos  
dc.description.fil
Fil: Stathis, James. Ibm Research; Estados Unidos  
dc.journal.title
ECS Transactions  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1149/1.2956044  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1149/1.2956044  

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