Artículo

Ionizing radiation effects on non volatile read only memory cells

Libertino, Sebania; Corso, Domenico; Lisiansky, Michael; Roizin, Yakov; Palumbo, Félix Roberto MarioIcon ; Principato, Fabio; Pace, Calogero; Finocchiaro, Paolo; Lombardo, Salvatore
Fecha de publicación: 12/2012
Editorial: Institute of Electrical and Electronics Engineers
Revista: Ieee Transactions on Nuclear Science
ISSN: 0018-9499
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

Threshold voltage and drain-source current behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of with the total irradiation dose. A brief physical explanation is also provided.
Palabras clave: FLASH MEMORIES , NITRIDE READ-ONLY MEMORIES (NROM) , OXIDE/NITRIDE/OXIDE (ONO) , RADIATION HARDNESS
 
Archivos asociados
Thumbnail
 
Tamaño: 760.7Kb
Formato: PDF
.
Licencia
info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/199367
URL: https://ieeexplore.ieee.org/document/6340370
DOI: http://dx.doi.org/10.1109/TNS.2012.2219071
Colecciones
Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Citación
Libertino, Sebania; Corso, Domenico; Lisiansky, Michael; Roizin, Yakov; Palumbo, Félix Roberto Mario; et al.; Ionizing radiation effects on non volatile read only memory cells; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 59; 6; 12-2012; 3016-3020
Compartir
Altmétricas