Mostrar el registro sencillo del ítem

dc.contributor.author
Libertino, Sebania  
dc.contributor.author
Corso, Domenico  
dc.contributor.author
Lisiansky, Michael  
dc.contributor.author
Roizin, Yakov  
dc.contributor.author
Palumbo, Félix Roberto Mario  
dc.contributor.author
Principato, Fabio  
dc.contributor.author
Pace, Calogero  
dc.contributor.author
Finocchiaro, Paolo  
dc.contributor.author
Lombardo, Salvatore  
dc.date.available
2023-06-02T14:03:16Z  
dc.date.issued
2012-12  
dc.identifier.citation
Libertino, Sebania; Corso, Domenico; Lisiansky, Michael; Roizin, Yakov; Palumbo, Félix Roberto Mario; et al.; Ionizing radiation effects on non volatile read only memory cells; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 59; 6; 12-2012; 3016-3020  
dc.identifier.issn
0018-9499  
dc.identifier.uri
http://hdl.handle.net/11336/199367  
dc.description.abstract
Threshold voltage and drain-source current behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of with the total irradiation dose. A brief physical explanation is also provided.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
Institute of Electrical and Electronics Engineers  
dc.rights
info:eu-repo/semantics/openAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
FLASH MEMORIES  
dc.subject
NITRIDE READ-ONLY MEMORIES (NROM)  
dc.subject
OXIDE/NITRIDE/OXIDE (ONO)  
dc.subject
RADIATION HARDNESS  
dc.subject.classification
Ingeniería Eléctrica y Electrónica  
dc.subject.classification
Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información  
dc.subject.classification
INGENIERÍAS Y TECNOLOGÍAS  
dc.title
Ionizing radiation effects on non volatile read only memory cells  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2023-05-30T12:34:38Z  
dc.journal.volume
59  
dc.journal.number
6  
dc.journal.pagination
3016-3020  
dc.journal.pais
Estados Unidos  
dc.journal.ciudad
New York  
dc.description.fil
Fil: Libertino, Sebania. Consiglio Nazionale delle Ricerche; Italia  
dc.description.fil
Fil: Corso, Domenico. Consiglio Nazionale delle Ricerche; Italia  
dc.description.fil
Fil: Lisiansky, Michael. No especifíca;  
dc.description.fil
Fil: Roizin, Yakov. No especifíca;  
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina  
dc.description.fil
Fil: Principato, Fabio. Università degli Studi di Palermo; Italia  
dc.description.fil
Fil: Pace, Calogero. Università della Calabria; Italia  
dc.description.fil
Fil: Finocchiaro, Paolo. No especifíca;  
dc.description.fil
Fil: Lombardo, Salvatore. Consiglio Nazionale delle Ricerche; Italia  
dc.journal.title
Ieee Transactions on Nuclear Science  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/6340370  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1109/TNS.2012.2219071