Artículo
Threshold voltage variability of NROM memories after exposure to ionizing radiation
Corso, Domenico; Libertino, Sebania; Lisiansky, Michael; Roizin, Yakov; Palumbo, Félix Roberto Mario
; Principato, Fabio; Pace, Calogero; Finocchiaro, Paolo; Lombardo, Salvatore A.
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Fecha de publicación:
10/2012
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
Ieee Transactions On Electron Devices
ISSN:
0018-9383
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Threshold voltage (Vth) behavior of nitride read-only memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k∼2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiation tolerance of NROM memory arrays.
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Citación
Corso, Domenico; Libertino, Sebania; Lisiansky, Michael; Roizin, Yakov; Palumbo, Félix Roberto Mario; et al.; Threshold voltage variability of NROM memories after exposure to ionizing radiation; Institute of Electrical and Electronics Engineers; Ieee Transactions On Electron Devices; 59; 10; 10-2012; 2597-2602
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