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dc.contributor.author
Corso, Domenico
dc.contributor.author
Libertino, Sebania
dc.contributor.author
Lisiansky, Michael
dc.contributor.author
Roizin, Yakov
dc.contributor.author
Palumbo, Félix Roberto Mario
dc.contributor.author
Principato, Fabio
dc.contributor.author
Pace, Calogero
dc.contributor.author
Finocchiaro, Paolo
dc.contributor.author
Lombardo, Salvatore A.
dc.date.available
2023-05-18T13:57:02Z
dc.date.issued
2012-10
dc.identifier.citation
Corso, Domenico; Libertino, Sebania; Lisiansky, Michael; Roizin, Yakov; Palumbo, Félix Roberto Mario; et al.; Threshold voltage variability of NROM memories after exposure to ionizing radiation; Institute of Electrical and Electronics Engineers; Ieee Transactions On Electron Devices; 59; 10; 10-2012; 2597-2602
dc.identifier.issn
0018-9383
dc.identifier.uri
http://hdl.handle.net/11336/198022
dc.description.abstract
Threshold voltage (Vth) behavior of nitride read-only memories (NROMs) was studied after irradiation with photons (γ- and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to Vth variation and that the Vth loss and the variability can be modeled by a Weibull statistics with a shape parameter k∼2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the Vth loss distribution can be obtained, thus providing a predictive model of the radiation tolerance of NROM memory arrays.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Institute of Electrical and Electronics Engineers
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
FLASH MEMORIES
dc.subject
NITRIDE READ-ONLY MEMORIES (NROMS)
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OXIDE-NITRIDE-OXIDE (ONO)
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RADIATION HARDNESS
dc.subject.classification
Ingeniería Eléctrica y Electrónica
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Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Threshold voltage variability of NROM memories after exposure to ionizing radiation
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2023-05-16T14:21:56Z
dc.journal.volume
59
dc.journal.number
10
dc.journal.pagination
2597-2602
dc.journal.pais
Estados Unidos
dc.journal.ciudad
New York
dc.description.fil
Fil: Corso, Domenico. Consiglio Nazionale delle Ricerche; Italia
dc.description.fil
Fil: Libertino, Sebania. Consiglio Nazionale delle Ricerche; Italia
dc.description.fil
Fil: Lisiansky, Michael. No especifíca;
dc.description.fil
Fil: Roizin, Yakov. No especifíca;
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.fil
Fil: Principato, Fabio. Università degli Studi di Palermo; Italia
dc.description.fil
Fil: Pace, Calogero. Università della Calabria; Italia
dc.description.fil
Fil: Finocchiaro, Paolo. No especifíca;
dc.description.fil
Fil: Lombardo, Salvatore A.. Consiglio Nazionale delle Ricerche; Italia
dc.journal.title
Ieee Transactions On Electron Devices
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/abstract/document/6287009
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1109/TED.2012.2206596
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