Artículo

Hot-carrier-injection resilient RF power amplifier using adaptive bias

Pazos, Sebastián MatíasIcon ; Aguirre, Fernando LeonelIcon ; Palumbo, Félix Roberto MarioIcon ; Silveira, Fernando
Fecha de publicación: 11/2020
Editorial: Elsevier
Revista: Microelectronics Reliability
ISSN: 0026-2714
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

An adaptive bias strategy is proposed to harden fully integrated CMOS RF power amplifiers against time-dependent parametric degradation due to hot carrier injection. PA transistor DC current is compared to a reference using an operational transconductance amplifier that provides an adaptive gate DC voltage to the PA transistor as its threshold voltage increases due to stress. Based on degradation modelling obtained from experimental accelerated aging of a transistor and a RF PA implemented on a 130 nm technology, time dependent simulation results of the adaptive bias show that the proposed circuit effectively compensates for the threshold voltage increase of the main transistor.
Palabras clave: CMOS , BAND STRUCTURE , INTERFACES
 
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Tamaño: 498.7Kb
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info:eu-repo/semantics/restrictedAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/171939
URL: https://www.sciencedirect.com/science/article/pii/S0026271420304856
DOI: http://dx.doi.org/10.1016/j.microrel.2020.113912
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Citación
Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Palumbo, Félix Roberto Mario; Silveira, Fernando; Hot-carrier-injection resilient RF power amplifier using adaptive bias; Elsevier; Microelectronics Reliability; 114; 11-2020; 1-5
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