Artículo
Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
Fontana, Andrés; Pazos, Sebastián Matías
; Aguirre, Fernando Leonel
; Vega, Nahuel Agustín
; Muller, Nahuel; De la Fourniere, Emmanuel; Silveira, Fernando; Debray, Mario Ernesto; Palumbo, Félix Roberto Mario
Fecha de publicación:
03/2019
Editorial:
Institute of Electrical and Electronics Engineers Inc.
Revista:
IEEE Transactions on Nuclear Science
ISSN:
0018-9499
e-ISSN:
1558-1578
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout. A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.
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Citación
Fontana, Andrés; Pazos, Sebastián Matías; Aguirre, Fernando Leonel; Vega, Nahuel Agustín; Muller, Nahuel; et al.; Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp; Institute of Electrical and Electronics Engineers Inc.; IEEE Transactions on Nuclear Science; 66; 7; 3-2019; 1473-1482
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