A 180 nm low-power temperature-compensated voltage reference based on a MOSFET-specific current extractor circuit

Abstract

This work presents a low power CMOS voltage reference generator designed to minimize the impact of temperature variations. The circuit is based on a MOSFET-specific current extractor that biases a voltage generator. This gives an output voltage that is the sum of the threshold voltage and a term proportional to the thermal voltage (PTAT). This second term can be manipulated through the design parameters to compensate for the CTAT behavior of the threshold voltage. It was fabricated in a CMOS 180 nm technology node. It occupies an area of 0.019 mm2 . The mean measured voltage is 578 mV with a temperature coefficient of 121 ppm/°C and a line sensitivity of 0.28 %/V while consuming only 59.9 nW at its minimum supply voltage (0.8 V).