Electronic structure and hinge states of strained half-Heusler compounds LiSbZn and LiBiZn | ||
| dc.conicet.fuente | Crossref | |
| dc.conicet.organizacion | Lehigh University | |
| dc.conicet.organizacion | No especifíca | |
| dc.conicet.organizacion | Indian Institute of Technology Roorkee | |
| dc.conicet.organizacion | Indian Institute of Technology Roorkee | |
| dc.conicet.organizacion | Technische Universität Dresden | |
| dc.conicet.organizacion | Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | |
| dc.conicet.paisOrganizacion | Estados Unidos | |
| dc.conicet.paisOrganizacion | ||
| dc.conicet.paisOrganizacion | India | |
| dc.conicet.paisOrganizacion | India | |
| dc.conicet.paisOrganizacion | Alemania | |
| dc.conicet.paisOrganizacion | Argentina | |
| dc.conicet.produccionid | 12677690 | |
| dc.contributor.author | Das, Sanjib Kumar | |
| dc.contributor.author | Fulga, Ion Cosma | |
| dc.contributor.author | Dhawan, Rakshanda | |
| dc.contributor.author | Kandpal, Hem C. | |
| dc.contributor.author | van den Brink, Jeroen | |
| dc.contributor.author | Facio, Jorge Ismael | |
| dc.date.accessioned | 2026-11-12T14:19:08Z | |
| dc.date.issued | 2025-09 | |
| dc.date.updated | 2026-11-12T13:59:02Z | |
| dc.description.abstract | Half-Heusler compounds are a class of materials with great potential for the study of distinct electronic states. In this work, we investigate, from first-principles, the possibility of hinge modes in closely related topological phases that are tunable by moderate uniaxial strain. We consider two compounds: LiSbZn and LiBiZn. While LiSbZn has a topologically trivial band structure, the larger spin-orbit coupling of Bi causes a band inversion in LiBiZn. We predict the existence of topologically trivial hinge states in both cases. The hinge modes are affected by both the crystal termination and the bulk topological phase transitions, albeit indirectly: when present, topological surface modes hybridize with the hinge states and obscure their visibility. Thus, we find that the most visible hinge modes occur when no band inversions are present in the material. Our work highlights the interplay and competition between surface and hinge modes in half Heuslers, and may help guide the experimental search for robust boundary signatures in these materials. | es_ES |
| dc.description.fil | Fil: Das, Sanjib Kumar. Lehigh University; Estados Unidos | |
| dc.description.fil | Fil: Fulga, Ion Cosma. No especifíca; | |
| dc.description.fil | Fil: Dhawan, Rakshanda. Indian Institute of Technology Roorkee; India | |
| dc.description.fil | Fil: Kandpal, Hem C.. Indian Institute of Technology Roorkee; India | |
| dc.description.fil | Fil: van den Brink, Jeroen. Technische Universität Dresden; Alemania | |
| dc.description.fil | Fil: Facio, Jorge Ismael. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina | |
| dc.format | application/pdf | es_ES |
| dc.identifier.citation | Das, Sanjib Kumar; Fulga, Ion Cosma; Dhawan, Rakshanda; Kandpal, Hem C.; van den Brink, Jeroen; et al.; Electronic structure and hinge states of strained half-Heusler compounds LiSbZn and LiBiZn; American Physical Society; Physical Review B; 112; 12; 9-2025; 1-11 | es_ES |
| dc.identifier.eissn | 2469-9969 | es_ES |
| dc.identifier.institucional | CONICET | |
| dc.identifier.issn | 2469-9950 | es_ES |
| dc.identifier.repo | CONICET Digital | |
| dc.identifier.uri | http://hdl.handle.net/11336/301236 | |
| dc.journal.number | 12 | es_ES |
| dc.journal.pagination | 1-11 | es_ES |
| dc.journal.pais | Estados Unidos | es_ES |
| dc.journal.title | Physical Review B | es_ES |
| dc.journal.volume | 112 | es_ES |
| dc.language.iso | eng | es_ES |
| dc.publisher | American Physical Society | es_ES |
| dc.relation.alternativeid | info:eu-repo/semantics/altIdentifier/url/https://link.aps.org/doi/10.1103/fjjh-r9mb | |
| dc.relation.alternativeid | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1103/fjjh-r9mb | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights.uri | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | |
| dc.subject | HALF-HEUSLERS | es_ES |
| dc.subject | TOPOLOGICAL | es_ES |
| dc.subject | INSULATORS | es_ES |
| dc.subject | HINGE | es_ES |
| dc.subject.classification | Física de los Materiales Condensados | es_ES |
| dc.subject.classification | Ciencias Físicas | es_ES |
| dc.subject.classification | CIENCIAS NATURALES Y EXACTAS | es_ES |
| dc.title | Electronic structure and hinge states of strained half-Heusler compounds LiSbZn and LiBiZn | es_ES |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:ar-repo/semantics/artículo | |
| dc.type | info:eu-repo/semantics/publishedVersion | |
Archivos
Bloque original
Cargando...
- Nombre:
- CONICET_Digital_Nro.6c0a4ebf-ff1f-4f61-8a26-9fc7b6ead18c_D.pdf
- Tamaño:
- 1.78 MB
- Formato:
- Adobe Portable Document Format