Site localization of Cd impurities in sapphire
; Rentería, Mario
; Petrilli, H.M. ; Assali, L.V.C. Otros responsables
Fecha
08/2012
Editorial
American Physical Society
Revista
Physical Review B: Condensed Matter and Materials Physics
Título del libro
Nombre del evento
Fecha del evento
Institución organizadora
ISSN
1098-0121
eISSN
ISBN
Idioma
Inglés
Tipo del evento
Clasificación temática
Palabras clave
Cd Impurities , Ab Initio , Dft , Fp-Apw+Lo , Cp-Paw , Efg , Formation Energies , Aluminum Oxide , Sapphire
Resumen
By combining first-principles electronic structure calculations and existing time-differential γ-γ perturbed-angular-correlation experiments we studied the site localization, the local environment, and the electronic structure of Cd impurities in sapphire (α-Al 2O 3) single crystals in different charged states. The ab initio calculations were performed with the full-potential augmented plane wave plus local orbitals method and the projector augmented wave method. Comparing the calculated electric-field-gradient tensor at the Cd nuclei in the α-Al 2O 3 host lattice and the corresponding available experimental values, we have seen that it is equally possible for Cd to replace an Al atom (in a negative charge state) or to be placed in an interstitial site (in a neutral charge state). To finally address the issue of the Cd impurity localization, we performed formation energy calculations. These results have shown that Cd placed in the substitutional Al site, in the negatively charged state, is the most probable configuration. © 2012 American Physical Society.
Colecciones
Aprobación
Revisión
Complementado por
Referenciado por
Licencia Creative Commons
Excepto donde se indique lo contrario, la licencia de este ítem se describe como by-nc-sa
