Hf-based high-k dielectrics for p-Ge MOS gate stacks

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dc.conicet.organizacionTechnion - Israel Institute of Technology
dc.conicet.organizacionTechnion - Israel Institute of Technology
dc.conicet.organizacionConsejo Nacional de Investigaciones Científicas y Técnicas
dc.conicet.organizacionImec
dc.conicet.organizacionImec
dc.conicet.organizacionImec
dc.conicet.organizacionImec
dc.conicet.organizacionTechnion - Israel Institute of Technology
dc.conicet.paisOrganizacionIsrael
dc.conicet.paisOrganizacionIsrael
dc.conicet.paisOrganizacionArgentina
dc.conicet.paisOrganizacionBélgica
dc.conicet.paisOrganizacionBélgica
dc.conicet.paisOrganizacionBélgica
dc.conicet.paisOrganizacionBélgica
dc.conicet.paisOrganizacionIsrael
dc.conicet.produccionid5201419
dc.contributor.authorFadida, Sivan
dc.contributor.authorPalumbo, Félix Roberto Mario
dc.contributor.authorNyns, Laura
dc.contributor.authorLin, Dennis
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorEizenberg, Moshe
dc.date.accessioned2017-10-17T15:36:12Z
dc.date.available2017-10-17T15:36:12Z
dc.date.issued2013-12
dc.date.updated2017-10-12T21:21:46Z
dc.description.abstractThe physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.es
dc.description.filFil: Fadida, Sivan. Technion - Israel Institute of Technology; Israel
dc.description.filFil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.filFil: Nyns, Laura. Imec; Bélgica
dc.description.filFil: Lin, Dennis. Imec; Bélgica
dc.description.filFil: Van Elshocht, Sven. Imec; Bélgica
dc.description.filFil: Caymax, Matty. Imec; Bélgica
dc.description.filFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
dc.formatapplication/pdfes
dc.identifier.citationFadida, Sivan; Palumbo, Félix Roberto Mario; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; et al.; Hf-based high-k dielectrics for p-Ge MOS gate stacks; American Institute of Physics; Journal Of Vacuum Science & Technology B; 32; 12-2013; 1-7es
dc.identifier.institucionalCONICET
dc.identifier.issn0734-211Xes
dc.identifier.repoCONICET Digital
dc.identifier.urihttp://hdl.handle.net/11336/26706
dc.journal.ciudadMarylandes
dc.journal.pagination1-7es
dc.journal.paisEstados Unidoses
dc.journal.titleJournal Of Vacuum Science & Technology Bes
dc.journal.volume32es
dc.language.isoenges
dc.publisherAmerican Institute of Physicses
dc.relation.alternativeidinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1116/1.4837295
dc.relation.alternativeidinfo:eu-repo/semantics/altIdentifier/url/http://avs.scitation.org/doi/abs/10.1116/1.4837295
dc.rightsinfo:eu-repo/semantics/openAccess*
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/*
dc.subjectGees
dc.subjectHigh-Kes
dc.subjectMoses
dc.subject.classificationNano-materialeses
dc.subject.classificationNanotecnologíaes
dc.subject.classificationINGENIERÍAS Y TECNOLOGÍASes
dc.titleHf-based high-k dielectrics for p-Ge MOS gate stackses
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:ar-repo/semantics/artículo
dc.typeinfo:eu-repo/semantics/publishedVersion

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