Diffusion of Sn in different purity α-Ti

Abstract

The diffusion of Sn in the hcp (α) phase of high purity (99.99%) and pure (99.9%) Ti was studied at different temperatures from 873 up to 1100 K. The Rutherford Backscattering Spectrometry (RBS) technique was used to obtain the penetration profiles. The evolution of the diffusion coefficient, D, as a function of temperature follows the prediction of the Arrhenius law. No significant difference between both kinds of Ti samples was observed. Normal diffusion parameters, Q and D0, close to the self-diffusion ones were obtained.