Artículo

Tolerance of high mountain quinoa to simulated extraplanetary conditions: Changes in surface mineral concentration, seed viability and early growth

Ponessa, G. I. ; Such, P. ; González, J. A. ; Mercado, Maria Ines Icon; Buedo, S. E. ; Gonzalez, Daniela Alejandra Icon; Lalla, E. ; Freemantle, J. ; Daly, M. G.

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Fecha

06/2022

Editorial

Pergamon-Elsevier Science Ltd

Revista

Acta Astronautica

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ISSN

0094-5765

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Inglés

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Resumen

We studied the tolerance of one species of quinoa achenes from ecotype RQ252 to simulated extraplanetary conditions in a vacuum chamber (high low-pressure 10–2 to 10-7 Torr, UV laser simulated plasma radiation, and cryogenic temperature). The selection of this ecotype of quinoa achenes was a condition to previous studies, where RQ252 shows evidence of high efficacy in grow adaptation in the South America Puna between 3800–4500 m asl subjected to low oxygen and increased UV radiation exposition. After extraplanetary experiment exposure, we evaluated quinoa tolerance to experimental conditions through germination and early growth responses under a controlled laboratory standard atmosphere. Rate and final germination subjected to high low-pressure treatments during 4 h, 8 h, and 16 h were not different to control. Laser plasma application accelerated the germination rates. Final germination always reaches values up to 90%. SEM-EDS analysis showed structural changes on the pericarp surface, especially in high low-pressure and high low pressure + plasma treatments. EDS revealed that the quinoa pericarp subjected to different treatments showed changes in mineral content. Potassium ions decreased under high low-pressure and high low pressure + laser plasma irradiation (between 32 and 42%) but increased in a prolonged vacuum (35%) and more when plasma was added (96%). Early growth was affected by the different treatments, being the radicle length the most affected parameter. Our results suggest that quinoa achene ecotype RQ252 viability has excellent tolerance to extraplanetary conditions.

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