Few-electron semiconductor quantum dots with Gaussian confinement
; Romero, Rodolfo Horacio 
Otros responsables
Fecha
2009-03-08
Editorial
De Gruyter
Revista
Central European Journal of Physics
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Institución organizadora
ISSN
1895-1082
eISSN
1644-3608
ISBN
Idioma
Inglés
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Resumen
We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
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