Artículo

Few-electron semiconductor quantum dots with Gaussian confinement

Gomez, Sergio Santiago Icon; Romero, Rodolfo Horacio Icon

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Fecha

2009-03-08

Editorial

De Gruyter

Revista

Central European Journal of Physics

Título del libro

Nombre del evento

Fecha del evento

Institución organizadora

ISSN

1895-1082

eISSN

1644-3608

ISBN

Idioma

Inglés

Tipo del evento

Clasificación temática

Resumen

We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.

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