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dc.contributor.author
Olmos Asar, Jimena Anahí
dc.contributor.author
Rocha Leão, Cedric
dc.contributor.author
Fazzio, Adalberto
dc.date.available
2019-10-18T15:02:22Z
dc.date.issued
2018-07
dc.identifier.citation
Olmos Asar, Jimena Anahí; Rocha Leão, Cedric; Fazzio, Adalberto; Band gap tuning of layered III-Te materials; American Institute of Physics; Journal of Applied Physics; 124; 4; 7-2018; 45104-45104
dc.identifier.issn
0021-8979
dc.identifier.uri
http://hdl.handle.net/11336/86335
dc.description.abstract
Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale with its thickness and also study two other proposed materials with the same crystalline structure whose room-temperature stability we verify. We show that electronic band gaps up to 2.16 eV can be obtained by stacking up and/or applying perpendicular electric field to these III-Te monolayers. This form of band gap engineering may be promising for several technological applications.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
American Institute of Physics
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
GaTe
dc.subject
Optoelectronic devices
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Van der Waals heterostructures
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Band gap tuning
dc.subject.classification
Física de los Materiales Condensados
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Ciencias Físicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Band gap tuning of layered III-Te materials
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2019-09-30T18:32:01Z
dc.identifier.eissn
1089-7550
dc.journal.volume
124
dc.journal.number
4
dc.journal.pagination
45104-45104
dc.journal.pais
Estados Unidos
dc.journal.ciudad
New York
dc.description.fil
Fil: Olmos Asar, Jimena Anahí. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
dc.description.fil
Fil: Rocha Leão, Cedric. Universidade Federal Do Abc; Brasil
dc.description.fil
Fil: Fazzio, Adalberto. Centro Brasileiro de Pesquisas Físicas; Brasil
dc.journal.title
Journal of Applied Physics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.5021259
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.5021259
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