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dc.contributor.author
Rozenberg, Marcelo Javier  
dc.contributor.author
Inoue, I. H.  
dc.contributor.author
Sánchez, María José  
dc.date.available
2019-02-21T20:19:03Z  
dc.date.issued
2006-12  
dc.identifier.citation
Rozenberg, Marcelo Javier; Inoue, I. H.; Sánchez, María José; Strong electron correlation effects in nonvolatile electronic memory devices; American Institute of Physics; Applied Physics Letters; 88; 3; 12-2006; 1-3; 033510  
dc.identifier.issn
0003-6951  
dc.identifier.uri
http://hdl.handle.net/11336/70655  
dc.description.abstract
We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
American Institute of Physics  
dc.rights
info:eu-repo/semantics/openAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject.classification
Astronomía  
dc.subject.classification
Ciencias Físicas  
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS  
dc.title
Strong electron correlation effects in nonvolatile electronic memory devices  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2019-02-12T17:26:16Z  
dc.journal.volume
88  
dc.journal.number
3  
dc.journal.pagination
1-3; 033510  
dc.journal.pais
Estados Unidos  
dc.description.fil
Fil: Rozenberg, Marcelo Javier. Université Paris Sud; Francia. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina  
dc.description.fil
Fil: Inoue, I. H.. National Institute of Advanced Industrial Science and Technology; Japón  
dc.description.fil
Fil: Sánchez, María José. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina  
dc.journal.title
Applied Physics Letters  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.2164917  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.2164917  

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