Artículo

Strong electron correlation effects in nonvolatile electronic memory devices

Rozenberg, Marcelo JavierIcon ; Inoue, I. H.; Sánchez, María JoséIcon
Fecha de publicación: 12/2006
Editorial: American Institute of Physics
Revista: Applied Physics Letters
ISSN: 0003-6951
Idioma: Inglés
Tipo de recurso: Artículo publicado

Resumen

We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device.

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http://dx.doi.org/10.1063/1.2164917
https://aip.scitation.org/doi/10.1063/1.2164917
info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Citación: Rozenberg, Marcelo Javier; Inoue, I. H.; Sánchez, María José; Strong electron correlation effects in nonvolatile electronic memory devices; American Institute of Physics; Applied Physics Letters; 88; 3; 12-2006; 1-3; 033510
URI: http://hdl.handle.net/11336/70655
 

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