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dc.contributor.author
Sanchez, Rodolfo Daniel
dc.contributor.author
Mira, J.
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Rivas, J.
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Breijo, M. P.
dc.contributor.author
Señarís Rodríguez, M. A.
dc.date.available
2019-01-24T20:52:03Z
dc.date.issued
2011-01
dc.identifier.citation
Sanchez, Rodolfo Daniel; Mira, J.; Rivas, J.; Breijo, M. P.; Señarís Rodríguez, M. A.; Magnetoresistance, temporal evolution, and relaxation of the electrical resistivity in the re-entrant semiconducting La0.80Ba0.20CoO3 perovskite; Materials Research Society; Journal Of Materials Research; 14; 6; 1-2011; 2533-2539
dc.identifier.issn
0884-2914
dc.identifier.uri
http://hdl.handle.net/11336/68586
dc.description.abstract
We report here a study on the electrical and magnetic properties of La1-xBaxCoO3 in the re-entrant semiconducting region (x = 0.20). We find that in this material: (i) the insulator-metal-insulator sequence is unstable and evolves toward a purely semiconducting behavior; the initial ρ versus T curve can be reinstated upon appropriate annealing treatments; (ii) there are relaxation effects that can be seen by changing the polarity of the electrodes; (iii) there is a negative magnetoresistance Δρ/ρ approx. 2-3%, for a field as low as 9 kOe, especially at the metal-insulating transition temperatures; and (iv) there are important fluctuations in the electrical resistivity. Taking into account these experimental observations, we can interpret this material as an inhomogeneous system where two thermodynamic phases, one semiconducting and the other metallic and ferromagnetic, coexist, although they are crystallographically indistinguishable.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Materials Research Society
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
La0.80ba0.20coo3
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Magnetoresistance
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Electrical Properties
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Magnetism
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Astronomía
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Ciencias Físicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Magnetoresistance, temporal evolution, and relaxation of the electrical resistivity in the re-entrant semiconducting La0.80Ba0.20CoO3 perovskite
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2019-01-22T18:52:06Z
dc.journal.volume
14
dc.journal.number
6
dc.journal.pagination
2533-2539
dc.journal.pais
Estados Unidos
dc.journal.ciudad
Nueva York
dc.description.fil
Fil: Sanchez, Rodolfo Daniel. Universidad de Santiago de Compostela. Facultad de Física; España. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.fil
Fil: Mira, J.. Universidad de Santiago de Compostela. Facultad de Física; España
dc.description.fil
Fil: Rivas, J.. Universidad de Santiago de Compostela. Facultad de Física; España
dc.description.fil
Fil: Breijo, M. P.. Departamento de Química Fundamental E Industrial; España
dc.description.fil
Fil: Señarís Rodríguez, M. A.. Departamento de Química Fundamental E Industrial; España
dc.journal.title
Journal Of Materials Research
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.cambridge.org/core/journals/journal-of-materials-research/article/magnetoresistance-temporal-evolution-and-relaxation-of-the-electrical-resistivity-in-the-reentrant-semiconducting-la080ba020coo3-perovskite/92690586442AF479251486712081FD19
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1557/JMR.1999.0339
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