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dc.contributor.author
Sanchez, Rodolfo Daniel  
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Mira, J.  
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Rivas, J.  
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Breijo, M. P.  
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Señarís Rodríguez, M. A.  
dc.date.available
2019-01-24T20:52:03Z  
dc.date.issued
2011-01  
dc.identifier.citation
Sanchez, Rodolfo Daniel; Mira, J.; Rivas, J.; Breijo, M. P.; Señarís Rodríguez, M. A.; Magnetoresistance, temporal evolution, and relaxation of the electrical resistivity in the re-entrant semiconducting La0.80Ba0.20CoO3 perovskite; Materials Research Society; Journal Of Materials Research; 14; 6; 1-2011; 2533-2539  
dc.identifier.issn
0884-2914  
dc.identifier.uri
http://hdl.handle.net/11336/68586  
dc.description.abstract
We report here a study on the electrical and magnetic properties of La1-xBaxCoO3 in the re-entrant semiconducting region (x = 0.20). We find that in this material: (i) the insulator-metal-insulator sequence is unstable and evolves toward a purely semiconducting behavior; the initial ρ versus T curve can be reinstated upon appropriate annealing treatments; (ii) there are relaxation effects that can be seen by changing the polarity of the electrodes; (iii) there is a negative magnetoresistance Δρ/ρ approx. 2-3%, for a field as low as 9 kOe, especially at the metal-insulating transition temperatures; and (iv) there are important fluctuations in the electrical resistivity. Taking into account these experimental observations, we can interpret this material as an inhomogeneous system where two thermodynamic phases, one semiconducting and the other metallic and ferromagnetic, coexist, although they are crystallographically indistinguishable.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
Materials Research Society  
dc.rights
info:eu-repo/semantics/openAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
La0.80ba0.20coo3  
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Magnetoresistance  
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Electrical Properties  
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Magnetism  
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Astronomía  
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Ciencias Físicas  
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CIENCIAS NATURALES Y EXACTAS  
dc.title
Magnetoresistance, temporal evolution, and relaxation of the electrical resistivity in the re-entrant semiconducting La0.80Ba0.20CoO3 perovskite  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2019-01-22T18:52:06Z  
dc.journal.volume
14  
dc.journal.number
6  
dc.journal.pagination
2533-2539  
dc.journal.pais
Estados Unidos  
dc.journal.ciudad
Nueva York  
dc.description.fil
Fil: Sanchez, Rodolfo Daniel. Universidad de Santiago de Compostela. Facultad de Física; España. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina  
dc.description.fil
Fil: Mira, J.. Universidad de Santiago de Compostela. Facultad de Física; España  
dc.description.fil
Fil: Rivas, J.. Universidad de Santiago de Compostela. Facultad de Física; España  
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Fil: Breijo, M. P.. Departamento de Química Fundamental E Industrial; España  
dc.description.fil
Fil: Señarís Rodríguez, M. A.. Departamento de Química Fundamental E Industrial; España  
dc.journal.title
Journal Of Materials Research  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.cambridge.org/core/journals/journal-of-materials-research/article/magnetoresistance-temporal-evolution-and-relaxation-of-the-electrical-resistivity-in-the-reentrant-semiconducting-la080ba020coo3-perovskite/92690586442AF479251486712081FD19  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1557/JMR.1999.0339