Artículo
Magnetoresistance, temporal evolution, and relaxation of the electrical resistivity in the re-entrant semiconducting La0.80Ba0.20CoO3 perovskite
Fecha de publicación:
01/2011
Editorial:
Materials Research Society
Revista:
Journal Of Materials Research
ISSN:
0884-2914
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We report here a study on the electrical and magnetic properties of La1-xBaxCoO3 in the re-entrant semiconducting region (x = 0.20). We find that in this material: (i) the insulator-metal-insulator sequence is unstable and evolves toward a purely semiconducting behavior; the initial ρ versus T curve can be reinstated upon appropriate annealing treatments; (ii) there are relaxation effects that can be seen by changing the polarity of the electrodes; (iii) there is a negative magnetoresistance Δρ/ρ approx. 2-3%, for a field as low as 9 kOe, especially at the metal-insulating transition temperatures; and (iv) there are important fluctuations in the electrical resistivity. Taking into account these experimental observations, we can interpret this material as an inhomogeneous system where two thermodynamic phases, one semiconducting and the other metallic and ferromagnetic, coexist, although they are crystallographically indistinguishable.
Palabras clave:
La0.80ba0.20coo3
,
Magnetoresistance
,
Electrical Properties
,
Magnetism
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Identificadores
Colecciones
Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Sanchez, Rodolfo Daniel; Mira, J.; Rivas, J.; Breijo, M. P.; Señarís Rodríguez, M. A.; Magnetoresistance, temporal evolution, and relaxation of the electrical resistivity in the re-entrant semiconducting La0.80Ba0.20CoO3 perovskite; Materials Research Society; Journal Of Materials Research; 14; 6; 1-2011; 2533-2539
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