Artículo
Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects
Kayis, C.; Ferreyra, Romualdo Alejandro
; Wu, M.; Li, Xiaolin; Ozgur, U.; Matulionis, A.; Morkoç, H.
Fecha de publicación:
09/08/2011
Editorial:
American Institute of Physics
Revista:
Applied Physics Letters
ISSN:
0003-6951
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their degradation caused by electrical stress. Nearly identical devices from the same wafer have undergone a 7 h DC electrical stress at a fixed DC drain bias of V DS = 20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz-100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4 × 10 12 cm -2. This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements and consistent with the ultrafast decay of hot-phonons due to the phonon-plasmon coupling. © 2011 American Institute of Physics.
Palabras clave:
Gan
,
Degradation
,
Hfet
,
Low-Frequency Noise
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Articulos(IFISUR)
Articulos de INSTITUTO DE FISICA DEL SUR
Articulos de INSTITUTO DE FISICA DEL SUR
Citación
Kayis, C.; Ferreyra, Romualdo Alejandro; Wu, M.; Li, Xiaolin; Ozgur, U.; et al.; Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects; American Institute of Physics; Applied Physics Letters; 99; 6; 9-8-2011; 63505/1-63505/3
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