Artículo

Capacitance and resistance measurements of SnO2 thick-films

Ponce, Miguel AdolfoIcon ; Castro, Miriam SusanaIcon ; Aldao, Celso ManuelIcon
Fecha de publicación: 05/02/2008
Editorial: Springer
Revista: Journal of Materials Science: Materials in Electronics
ISSN: 0957-4522
Idioma: Inglés
Tipo de recurso: Artículo publicado

Resumen

Impedance spectroscopy measurements on SnO2 thick films were carried out in an air atmosphere and for temperatures between 25 0C and 425 0C.  Capacitance and resistance analyses reveal the mechanisms responsible for experimental responses.  Four different contributions to the overall capacitance and resistance were distinguished and assigned to the bulk, the grain boundary, the electrodes, and the presence of deep traps. The effects of trap states on the electrical behavior of the sensor were explored and a modified equivalent circuit model is proposed.

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https://link.springer.com/article/10.1007/s10854-008-9590-8
https://dx.doi.org/10.1007/s10854-008-9590-8
info:eu-repo/semantics/restrictedAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Citación: Ponce, Miguel Adolfo; Castro, Miriam Susana; Aldao, Celso Manuel; Capacitance and resistance measurements of SnO2 thick-films; Springer; Journal of Materials Science: Materials in Electronics; 20; 1; 5-2-2008; 25-32
URI: http://hdl.handle.net/11336/66154
 

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