Artículo
Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
Fecha de publicación:
04/2013
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
IEEE Electron Device Letters
ISSN:
0741-3106
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.
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Articulos(CCT - NOA SUR)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - NOA SUR
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - NOA SUR
Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Marín Ramírez, Oscar Alonso; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 34; 5; 4-2013; 590-592
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