Artículo

Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon

Marín Ramírez, Oscar AlonsoIcon ; Urteaga, RaulIcon ; Comedi, David MarioIcon ; Koropecki, Roberto RomanIcon
Fecha de publicación: 04/2013
Editorial: Institute of Electrical and Electronics Engineers
Revista: IEEE Electron Device Letters
ISSN: 0741-3106
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.
Palabras clave: Metal/Semiconductor Interfaces , Porous Silicon (Ps) , Switchable Diode Effect
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/6542
URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6502196
DOI: http://dx.doi.org/ 10.1109/LED.2013.2253754
DOI: http://dx.doi.org/10.1109/LED.2013.2253754
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Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Marín Ramírez, Oscar Alonso; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 34; 5; 4-2013; 590-592
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